The 153th Topical Symposium of the Magnetic Society of Japan / The 15th Topical symposium of Spin-electronics
Progress in MTJ and its future application for Spin-electronics devices
Development of new materials such as crystalline MgO tunneling barrier and half metallic materials provides magnetic tunneling junction (MTJ) with extremely high magnetoresistaice ratio. The appearance of these high quality MTJs accelerated not only the development of new spin-electronics devices such as MRAM and Spin-RAM, but also the research on the interaction between spin current and localized magnetic moments.
In this symposium, we will focus on the recent research on MTJs and their application to the spin-electronics devices. We will also discuss new spin-electronics phenomena for the future devices. We have invited a number of active researchers in this field. They will inform us of the latest research achievements and discuss the spin-electronics devices. We very much look forward to your participation.
| Date: | February 27 , 2007 (Tuesday) , 13:00-17:00 |
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| Venue: | Kagaku Kaikan 5F room No.501 Suruga-dai 1-5, Kanda, Chiyoda-Ku, Tokyo (3 mins. walk from Ochanomizu Station of JR or Shin-ochanomizu Station of Subway) TEL: 03-3292-6162 |
| In cooperation with: | IEEE Mag.Soc.Japan Chapter, The Japan Institute of Metals, IEE of Japan, IEICE, The Physical Society of Japan, The Japan Society of Applied Physics |
| Admission fee: | Free (reserved reader and student) 2,000 Yen (member and corporate member) 4,000Yen (non-member) |
| Textbook: | 1,000 Yen (member, corporate member, non-member and student) |
| Further information: | please contact The Magnetics Society of Japan. TEL. 03-5281-0106 URL: http://www.wdc-jp.com/msj/intro/office.html |
| Organizers: | T. Kuroiwa (Mitsubishi), N. Ohshima (NEC), Y. Saito (Toshiba) |
Program
| Chairperson: Y. Saito (Toshiba) | |
| 13:00-13:35 | “Magnetoresistance effect in magnetic tunnel junctions with Co-based full-Heusler alloy electrodes” N. Tezuka1), N. Ikeda1), S. Sugimoto1), K. Inomata1,2) (1)Tohoku Univ., 2)NIMS) |
| 13:35-14:10 | “Damping constant of free layer materials for MRAM application measured by using FMR” Y. Ando, M. Oogane, D. Watanabe, M. Watanabe, R. Yilgin, S. Yakata, T. Miyazaki (Tohoku Univ.) |
| Coffee Break 14:10-14:25 | |
| Chairperson: N. Ohshima (NEC) | |
| 14:25-15:00 | “MRAM technologies employing current induced magnetic field writing” S. Ueno1), T. Kuroiwa2), M. Shimizu1), Y. Inoue1)(1)Renesas, 2)Mitsubishi) |
| 15:00-15:35 | “Magnetoresistance and current-induced magnetization switching in sputter deposited MgO barrier magnetic tunnel junctions.” J. Hayakawa1,2), S. Ikeda2), Y. M. Lee2), R. Sasaki2), F. Matsukura2), T. Meguro2), H. Takahashi1,2) ,H. Ohno2) (1)Hitachi, 2)Tohoku Univ.) |
| Coffee Break 15:35-15:50 | |
| Chairperson: T. Kuroiwa (Mitsubishi) | |
| 15:50-16:25 | “Spin torque diode and negative resistance” H. Maehara1), Y. Suzuki2), M. Shiraishi2), M. Mizuguchi2), M. Ohishi2), H. Kubota3), A. Fukushima3), Y. Otani3), S. Yuasa3), K. Ando3), Y. Nagamine1), K. Tsunekawa1), D. Djayaprawira1)(1)Canon-ANELVA, 2)Osaka Univ., 3)AIST) |
| 16:25-17:00 | “Electrical detection of spin Hall effect by means of nonlocal techniques” T. Kimura1,2), L. Vila1), Y. Otani1,2) (1)Univ. of Tokyo, 2)RIKEN) |
*Audio and/or visual recording is prohibited.
