The 134th Topical Symposium of the Magnetics Society of Japan / The 22th Symposium of the Magnetic Artificial Structured Thin Film
The current status of spin electronics, and its future
In recent years, the research on the physics and applications of spin electronics are increasingly active in many companies and institutions worldwide. One of the most important applications is magnetic random access memory (MRAM) and Magnetoresistive heads, and information processing application based on spin dependent transport phenomena.
However, there are many subjects in order to actualize the applications. Especially, low electric power technology of spin reversal, a half metal thin film, a new device, etc. are considered to be important subjects, and various trials are carried out to the important subjects from a viewpoint of both basic research and application development.
In this joint symposium on “The current status of spin electronics, and its future “, researchers actively working in this field will give talks on their most recent results and will discuss the future of spin electronics. This symposium invites participation and active discussion of researchers, engineers, and students who are interested in this emerging field.
| Date: | January 29 (Thursday), 9:30 -19:00, January 30 (Friday), 9:00 -17:45 |
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| PlaceVenue: | Tokyo Univ. of agri. &Tech., No. 11 hall, Multiple-purpose conference room (http://www.tuat.ac.jp/Gaiyou/koganeiE.html, http://www.tuat.ac.jp/map/map_koganei-e.html) |
| In cooperation with: | IEEE Mag. Soc. Japan Chapter, IEE of Japan, IEICE, The Physical Society of Japan, The Japan Society of Applied Physics, The Japan Institute of Metals,COE of Tokyo Univ. of agri. &Tech. (Future Nano-Materials) |
| Cost: | 3000 Yen (member and corporate member), 6000 Yen (non-member) |
| Textbook: | 1000 Yen (member, corporate member, and non-member) |
| For further information: | contact The Magnetics Society of Japan at TEL 03-5281-0106. |
| Organizers: | Y. Saito (Toshiba), K. Ito (Hitachi), T. Ishibashi(Tokyo Univ. of Agri &Tech), T. Kondo(Tokyo Inst. of Tech.), N. Ohshima(NEC), K. Osano(Matsushita), M. Tsunoda(Tohoku Univ.), Y. Ootani (RIKEN), M. Hashimoto (Sony), K. Hatori (TDK) |
Program
| January 29, 2004 (Thursday) | |
| Chairperson Y. Saito (Toshiba) | |
| 1. 9 : 30 – 10 : 20 | Spin-electronics: Spin current and its application. S. Maekawa (Tohoku Univ.) |
| 2. 10 : 20-11 : 10 | TMR in MTJs with Full-Heusler alloys K. Inomata (Tohoku Univ.) |
| 3. 11 : 10 – 12 : 00 | Physical properties and thin film growth of high-Curie temperature perovskite oxides H. Asano, A. Tsuzuki, M. Sugiyama, and M. Matsui (Nagoya Univ.) |
| 12 : 00-13 : 30 | Lunch |
| Chairperson T. Ishibashi(Tokyo Univ. of Agri &Tech) | |
| 4. 13 : 00 – 13 : 50 | Properties of Mn doped III-V semiconductors F. Matsukura (Tohoku Univ.) |
| 5. 13 : 50 – 14 : 40 | Growth and Characterization of zinc-blende spin-electronic materials H. Akinaga (AIST) |
| 6. 14 : 40 – 15 : 30 | band structure of half-metals H. Akai, A. Yamaguchi, H. Taniguchi, S. Nasu (Osaka Univ.), K.Miyake, I. Nibu (Kyoto Univ.), T. Shinjo (International Institute for Advanced Studies) |
| 15 : 30 – 15 : 40 | Break |
| Chairperson K. Ito (Hitachi) | |
| 7. 15 : 40 – 16 : 30 | Basis of a spin-electronics A. Sakuma (Tohoku Univ.) |
| 8. 16 : 30 – 17 : 20 | Theory and experimental results of spin current driven magnetic switching Y. Suzuki, K. Ogami, TA. Tulapurkar, A. Fukushima, E. Tamura (AIST, Sony) |
| 9. 17 : 20 – 18 : 10 | Spin accumulation measured in the non-local configuration Y. Otani, T. Kimura, and J. Hamrle (RIKEN) |
| 10.18 : 10 – 19 : 00 | Domain wall motion by the spin transfer current drive T. Ono (Osaka Univ.) |
| January 30, 2004 (Friday) | |
| Chairperson M. Tsunoda(Tohoku Univ.) | |
| 1. 9 : 00 – 9 : 50 | Spintronics in Data Storage -CIP/CPPGMR and NOL Technologies M. Sahashi (Tohoku Univ.) |
| 2. 9 : 50-10 : 40 | Recent developments in the CPP-GMR heads Y. Shimizu, Y. Seyama, A. Jogo, R. Kondo, T. Ibusuki, H. Kishi, Y. Kamata, K. Nagasaka, S. Eguchi, A. Tanaka (Fujitsu Laboratories LTD.), K. Sato, J. Hashimoto (Fujitsu LTD.) |
| 3. 10 : 40 – 11 : 30 | Extendibility and Reliability of 100Gbpsi class TuMR Heads T. Kagami, T. Kuwashima, N. Hachisuka, N. Kasahara, K. Sato, N. Ohta, S. Miura, T. Uesugi, N. Takahashi, T. Kanaya, K. Inage, M. Naoe, H. Kiyono, S. Saruki, K. Barada, K. Nagai, K. Terunuma , K. Fukuda, A. Kobayashi (TDK) |
| 11 : 30 – 12 : 30 | Lunch |
| Chairperson N. Ohshima(NEC) | |
| 4. 12 : 30 – 13 : 20 | Features and Technologies of MRAM H.Hada, S. Tahara (NEC), Y. Asao, and H. Yoda (Toshiba) |
| 5. 13 : 20 – 14 : 10 | MRAM’s future prospects and its Challenges K. Kim(Samsung) |
| 6. 14 : 10 – 15 : 00 | Magnetic RAM – A platform non-volatile technology customized for high performance and/or high density applications. A.R. Sitaram(Infineon/IBM) |
| 15 : 00 – 15 : 15 | Break |
| Chairperson T. Kondo(Tokyo Inst. of Tech.) | |
| 7. 15 : 15 – 16 : 05 | Si quantum computer K. M. Itoh (Keio Univ., CREST-JST) |
| 8. 16 : 05 – 16 : 55 | Electrical coherent manipulation of nuclear spins in semiconductors T. Machida (PRESTO-JST), T. Yamazaki, K. Ikushima, and S. Komiyama (Univ. of Tokyo) |
| 9. 16 : 55 – 17 : 45 | A spin MOSFET and its applications S. Sugahara (Univ. of Tokyo, PRESTO-JST), T. Matsuno (Univ. of Tokyo) and M. Tanaka (Univ. of Tokyo, PRESTO-JST) |
