Volume 5, No. 4 CONTENTS
◆ Guest Comment Signal Processing for Information Storage……H. Osawa ◆ Review Articles on Recent Topics of Magnetoresistive Random Access Memory Devices Objective…..T. Kai Review: Magnetic Random Access Memory……T. Miyazaki, S. Mizukami, D. Watanabe, and F. Wu Topics: Toggle and Spin-Torque MRAM: Status and Outlook……J. M. Slaughter, N. D. Rizzo, F. B. Mancoff, R. Whig, K. Smith, S. Aggarwal, and S. Tehrani Topics: High-Speed MRAM Based on Current-Induced Domain Wall Motion……N. Ishiwata, S. Fukami, T. Suzuki, N. Ohshima, K. Nagahara, S. Miura, and T. Sugibayashi Topics: Spin-Transfer Torque Writing Magneto-Resistive Random Access Memory with Perpendicular Magnetic Tunnel Junctions……H. Yoda ◆ Lecture: Applications of Micromagnetics to Magnetic Recording V Various Models for Read-Back Simulations Using […]