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The 145th Topical Symposium of the Magnetic Society of Japan,
The 10th Topical symposium of Spin-electronics
The forefront of Spin-current-driven devices |
Spin-current -driven devices are an attractive research topic in magnetic devices because they have the high potential of active devices, such as spin transistor and spin diode. In addition, they will change the recording mechanism of the high density magnetic memories.
In this symposium, we will focus on the recent research on spin current driven magnetic phenomena and its' potential to the devices. We have invited a number of active researchers in this field. They will inform us of the latest research achievements and discuss the Spin-current-driven devices. We very much look forward to your participation.
| Date: |
January 30, 2006 (Monday) 9:30 - 17:40 |
| Place: |
Kagaku Kaikan, 6F room No.601
(3 min walk from JR and Subway Ochanomizu Station)
URL: http://www.chemistry.or.jp/kaimu/office/map.html |
| Admission fee: |
Free (reserved reader and student)
2,000 Yen (member and corporate member)
4,000 Yen (non-member) |
| Textbook: |
1,000 Yen (member, corporate member, non-member and student) |
| For further information: |
Contact The Magnetic Society of Japan at:
TEL. 03-5281-0106 |
| Organizers: |
K. Ando (AIST), N. Ohshima (NEC), Y. Otani (Univ. of Tokyo), Y. Saito (Toshiba) |
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| Program: |
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| Chairperson: Y. Otani |
| 9:30-9:35 |
Introduction
N. Ohshima |
| 9:35-10:15 |
“Spin-dependent transport properties in GaMnAs-based MTJs"
H Saito, S. Yuasa, K. Ando (AIST) |
| 10:15-10:55 |
“Current induced magnetization reversal in (Ga,Mn)As MTJs"
D. Chiba1,2, T. Kita1,2, F. Matsukura2,1, H. Ohno2,1 (1)ERATO, JST,2) Tohoku Univ.) |
| 10:55-11:35 |
“Spin-transistors for spin-electronic integrated circuits"
S. Sugahara (Univ. of Tokyo) |
| 11:35-12:40 |
Lunch |
| Chairperson: N. Ohshima |
| 12:40-13:20 |
“Computer simulation of magnetization instability by spin-polarized current injection"
Y. Nakatani (Univ. of Electro-Communications) |
| 13:20-14:00 |
“Manipulating Magnetic State using Spin Currents"
Y. Otani and T. Kimura (Univ. of Tokyo, RIKEN) |
| 14:00-14:40 |
“Current-driven domain wall motion and its application"
T.Ono, A.Yamaguchi, H.Tanigawa, K.Yano, S.Kasai (Kyoto Univ.) |
| 14:40-15:00 |
Coffee Break |
| Chairperson: Y. Saito |
| 15:00-15:40 |
“Spin-transfer switching in MgO barrier based MTJs"
H. .Kubota, A. Fukushima, S. Yuasa, K. Ando, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe, Y. Ootani, Y. Suzuki (AIST, ANELVA, Osaka Univ.) |
| 15:40-16:20 |
“ Micro-wave properties of spin injection devices"
Y. Suzuki, A. Tulapurkar, M. Mizuguchi, H. Kubota, A.Fukushima, S. Yuasa, H. Maehara, K. Tsunekawa, D. Djayaprawira, N. Watanabe (Osaka Univ. AIST ANELVA)
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| 16:20-17:00 |
“ Integration technologies of MRAM for embedded memories"
K. Nagahara (NEC)
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| 17:00-17:40 |
“ The practical and advanced technology of TMR heads"
T. Kagami, S. Saruki, K. Inage and T. Kuwashima (TDK)
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Audio and/or visual recording is prohibited. |
