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The 132th Topical Symposium of The Magnetics Society of Japan
Recent Progress on Fabrication Technology of Nanostructured Magnetic Device
Recently, there has been an increasing interest in magnetic devices including tunnel magnetoresistance (TMR) devices, current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) devices and high-frequency magnetic devices (HF-MEMS). For achieving advanced device performances, it is essential to miniaturize and control the structures of the film devices.
In this symposium, focus is upon the film fabrication methods and processes that could realize the miniaturization, ultra thin and multilayer, and controlled structures. The researchers actively working in this field will give us an explanatory talk and discuss how the properties and performance of the magnetic devices are related to these fabrication processes. This symposium invites participation and active discussion of researchers, engineers, and students who are interested in this emerging field.
| Date: |
November 28 (Friday) 10:00 - 16:40 |
| Place: |
Chuo University, Surugadai Memorial Hall, room No.275
(5 min walk from JR Ochanomizu station)
http://www.chuo-u.ac.jp/chuo-u/kinenkan_hp/map.htm |
| Fee: |
Free (student), 2,000 Yen (member, corporate member), 4,000 Yen (non-member), |
| Textbook: |
1,000 Yen (member, corporate member, non-member, students) |
| In cooperation with: |
The Japan Society of Applied Physic, IEE of Japan, IEICE, The Japan Institute of Metals, and The Physical Society of Japan., IEEE Magn. Soc. Japan Chapter
For further information, contact The Magnetics Society of Japan at TEL 03-5281-0106 |
| Organizers: |
H.Asano (Nagoya Univ.), S. Hirose (AIST), K. Hattori (TDK), and K. Ono (KEK) |
Program:
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| 10:00- 10:05 |
Opening
H. Asano (Nagoya Univ.) |
10:05- 10:55
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Fabrication of permanent magnet films by aerosol deposition method
S. Sugimoto (Tohoku Univ.) |
10:55- 11:45
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Nano-fabrication of magnetic materials
I. Nakatani (NIMS) |
11:45- 12:35
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Fabrication and synchrotron radiation analysis of magnetic nanostructures
M. Oshima (Tokyo Univ.) |
| 12:35- 14:00 |
<Lunch>
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14:00- 14:50
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Fabrication of current-perpendicular-to-the-plane GMR devices by utilizing a nano-oxide-layer (NOL) technique
H. Iwasaki (Toshiba) |
14:50- 15:40
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Enhancement of lateral grain growth by novel buffer layer and fabrication process of tunnel barriers by using microwave-excited plasma
M. Tsunoda (Tohoku Univ.) |
15:40- 16:30
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Spin dependent single electron tunneling in nanostructures consisting of magnetic nano-dot arrays
K. Yakushiji (Tohoku Univ.) |
16:30- 16:40
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Closing
S. Hirose (AIST) |
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| * Audio and/or visual recording is prohibited.
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